InGaAs/InP quantum well infrared photodetector integrated on Si substrate by Mo/Au metal-assisted wafer bonding-Reference-Cited by-同舟云学术

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InGaAs/InP quantum well infrared photodetector integrated on Si substrate by Mo/Au metal-assisted wafer bonding

Published:2018-01-18 Issue:2 Volume:8 Page:413
ISSN:2159-3930
Container-title:Optical Materials Express
language:en
Short-container-title:Opt. Mater. Express

Author:

Park Min-Su,Rezaei Mohsen,Nia Iman,Brown Robert,Bianconi Simone,Tan Chee Leong,Mohseni Hooman

Funder

Army Research Office (ARO)

Defense Advanced Research Projects Agency (DARPA)

Directorate for Engineering (ENG)

Publisher

The Optical Society

Subject

Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Quantum‐well infrared photodetectors

2. Quantum well photoconductors in infrared detector technology

3. 1024 × 1024 pixel mid-wavelength and long-wavelength infrared QWIP focal plane arrays for imaging applications

4. Development of indium bumping technology through AZ9260 resist electroplating

5. Fabrication of indium bumps for hybrid infrared focal plane array applications

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1. Monolithic Growth of Patternable III–V on LiNbO₃;Crystal Growth & Design;2024-05-28

2. Simulation investigation of effects of substrate and thermal boundary resistance on performances of AlGaN/GaN HEMTs;Physica Scripta;2024-05-24

3. Study of InP/GaP Quantum Wells Grown by Vapor Phase Epitaxy;Technical Physics Letters;2023-12

4. Influence of Post-Bonding Annealing Treatment on Interface Characteristics of Si-Si Wafer Bonded via Room Temperature Surface Activation;Journal of Materials Engineering and Performance;2023-11-21

5. Reliability enhancement of InGaAs/AlGaAs quantum-well lasers on on-axis Si (001) substrate;APL Materials;2023-09-01

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