Influence of Post-Bonding Annealing Treatment on Interface Characteristics of Si-Si Wafer Bonded via Room Temperature Surface Activation
Author:
Publisher
Springer Science and Business Media LLC
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Link
https://link.springer.com/content/pdf/10.1007/s11665-023-08967-2.pdf
Reference27 articles.
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5. M. Funato, S. Fujita, and S. Fujita, Integration of GaN with Si Using a AuGe-Mediated Wafer Bonding Technique, Appl. Phys. Lett., 2000, 77(24), p 3959–3961.
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