Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots-Reference-Cited by-同舟云学术

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Vertical-Injection AlGaInP LEDs with n-AlGaInP Nanopillars Fabricated by Self-Assembled ITO-Based Nanodots

Published:2015-09-15 Issue:1 Volume:10 Page:
ISSN:1931-7573
Container-title:Nanoscale Research Letters
language:en
Short-container-title:Nanoscale Res Lett

Author:

Ryu Ho-Soung,Park Min Joo,Oh Seung Kyu,Oh Hwa-Sub,Baek Jong-Hyeob,Kwak Joon Seop

Funder

National Research Foundation of Korea (KR)

Publisher

Springer Science and Business Media LLC

Subject

Condensed Matter Physics,General Materials Science

Link

http://link.springer.com/content/pdf/10.1186/s11671-015-1064-3.pdf

Reference18 articles.

1. Lo HC, Hsieh YT, Shei SC, Lee YC, Zeng XF, Weng WY, et al. AlGaInP LEDs prepared by contact-transferred and mask-embedded lithography. IEEE J Quantum Electron. 2010;46:1834.

2. Guo X, Guo CW, Jin YH, Chen Y, Li QQ, Fan SS. AlGaInP light-emitting diodes with SACNTs as current-spreading layer. Nanoscale Res Lett. 2014;9:171.

3. Guo X, Guo CW, Wang C, Li C, Sun XM. AlGaInP LED with low-speed spin-coating silver nanowires as transparent conductive layer. Nanoscale Res Lett. 2014;9:670.

4. Oh HS, Joo JH, Lee JH, Baek JH, Lee JK, Lee SK, et al. Investigation of strained multi-quantum well structures for high bright AlGaInP-based light emitting diodes. Jpn J Appl Phys. 2009;48:072204.

5. Streubel K, Linder N, Wirth R, Jaeger A. High brightness AlGaInP light-emitting diodes. IEEE J Sel Top Quantum Electron. 2002;8:321.

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