Process-dependent band structure changes of transition-metal (Ti,Zr,Hf) oxides on Si (100)
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1639944
Reference10 articles.
1. Electronic states at the interface of Ti–Si oxide on Si(100)
2. MOSFET transistors fabricated with high permitivity TiO/sub 2/ dielectrics
3. Titanium dioxide (TiO2)-based gate insulators
4. Photoemission study of energy-band alignments and gap-state density distributions for high-k gate dielectrics
5. Chemical and electronic structure of ultrathin zirconium oxide films on silicon as determined by photoelectron spectroscopy
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