SiO2 thin film growth through a pure atomic layer deposition technique at room temperature-Reference-Cited by-同舟云学术

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SiO2 thin film growth through a pure atomic layer deposition technique at room temperature

Published:2020 Issue:31 Volume:10 Page:18073-18081
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Arl D.¹²^ORCID,Rogé V.¹²,Adjeroud N.¹²,Pistillo B. R.¹²^ORCID,Sarr M.¹²,Bahlawane N.¹²^ORCID,Lenoble D.¹²

Affiliation:

1. Luxembourg Institute of Science and Technology

2. Luxembourg

Abstract

In this study, less contaminated and porous SiO₂ films were grown via ALD at room temperature.

Funder

Fonds National de la Recherche Luxembourg

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA01602K

Reference60 articles.

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4. Transparent conductors as solar energy materials: A panoramic review

5. Self-Cleaning and Anti-Fog Surfaces via Stimuli-Responsive Polymer Brushes

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