Thermal stability of hafnium zirconium oxide on transition metal dichalcogenides-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Thermal stability of hafnium zirconium oxide on transition metal dichalcogenides

Published:2021-04 Issue: Volume:546 Page:149058
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Sales Maria Gabriela,Jaszewski Samantha T.,Fields Shelby S.,Litwin Peter M.,Ihlefeld Jon F.,McDonnell Stephen J.

Funder

James Madison University

University of Virginia

Semiconductor Research Corporation

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference71 articles.

1. Ferroelectric memories;Scott;Science,1989

2. Scaling effects in perovskite ferroelectrics: fundamental limits and process-structure-property relations;Ihlefeld;J. Am. Ceram. Soc.,2016

3. Manufacturable high-density 8 Mbit one transistor-one capacitor embedded ferroelectric random access memory;Udayakumar;Jpn. J. Appl. Phys.,2008

4. Ferroelectricity in hafnium oxide thin films;Böscke;Appl. Phys. Lett.,2011

5. Ten-Nanometer ferroelectric Si:HfO2 films for next-generation FRAM capacitors;Mueller;IEEE Electron Device Lett.,2012

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of atmospheric UV-O3 exposure of WSe2 on the properties of the HfO2/WSe2 interface;Applied Physics Letters;2023-09-18

2. Photoelectric Characteristics of Isotype Heterostructure p-WSe₂/p-Si Photodetector with Improved Photoresponsivity and Detectivity;ACS Applied Electronic Materials;2023-08-17

3. Direct growth and interface reactions of ferroelectric Hf0.5Zr0.5O2 films on MoS2;Applied Surface Science;2023-08

4. van der Waals epitaxy of transition metal dichalcogenides via molecular beam epitaxy: looking back and moving forward;Materials Advances;2022

5. WSe2 growth on hafnium zirconium oxide by molecular beam epitaxy: the effect of the WSe2 growth conditions on the ferroelectric properties of HZO;2D Materials;2021-10-21

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3