Direct growth and interface reactions of ferroelectric Hf0.5Zr0.5O2 films on MoS2-Reference-Cited by-同舟云学术

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Direct growth and interface reactions of ferroelectric Hf0.5Zr0.5O2 films on MoS2

Published:2023-08 Issue: Volume:629 Page:157426
ISSN:0169-4332
Container-title:Applied Surface Science
language:en
Short-container-title:Applied Surface Science

Author:

Leem Mirine,Eom Deokjoon,Lee Heesoo,Park Kwangwuk,Jeong Kwangsik,Kim Hyoungsub

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Condensed Matter Physics,Surfaces and Interfaces,General Physics and Astronomy,General Chemistry

Reference37 articles.

1. Channel length scaling of MoS2 MOSFETs;Liu;ACS Nano,2012

2. Ferroelectricity in hafnium oxide thin films;Böscke;Appl. Phys. Lett.,2011

3. Effect of annealing ferroelectric HfO2 thin films: in situ, high temperature X-ray diffraction;Park;Adv. Electron. Mater.,2018

4. Nanoscale doping and its impact on the ferroelectric and piezoelectric properties of Hf0.5Zr0.5O2;Chouprik;Nanomaterials,2022

5. The fundamentals and applications of ferroelectric HfO2;Schroeder;Nat. Rev. Mater.,2022

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. On the Thickness Scaling of Ferroelectric Hafnia;IEEE Transactions on Materials for Electron Devices;2024

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