Detection of field-induced single-acceptor ionization in Si by single-hole-tunneling transistor
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2762278
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1. Simulation Study of Individual and Combined Sources of Intrinsic Parameter Fluctuations in Conventional Nano-MOSFETs
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