An apparatus for beam-rocking reflection high-energy electron diffraction and total reflection angle x-ray spectroscopy
Author:
Publisher
AIP Publishing
Subject
Instrumentation
Reference17 articles.
1. Some New Techniques in Reflection High Energy Electron Diffraction (RHEED) Application to Surface Structure Studies
2. Some New Diffraction Phenomena in Reflection High Energy Electron Diffraction of Clean Silicon (111) Surfaces
3. Rocking-curve analysis of reflection high-energy electron diffraction from the Si(111)-(√3 × √3 )R30°-Al, -Ga, and -In surfaces
4. Rheed intensity analysis of Si(111)7 × 7 at one-beam condition
5. Atomic depth distribution analysis of Ag and Au on Si(111) during epitaxial growth by total reflection angle X-ray spectroscopy
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1. Real-time surface composition and roughness analysis in MBE using RHEED-induced X-ray fluorescence;Journal of Crystal Growth;2003-04
2. Transition from alloying layer growth to island growth of Sn on a Ga-covered Si surface;Surface Science;2003-03
3. Atomic depth distribution and growth modes of Sn on Si(111)–4×1-In and α-√3×√3-Au surfaces at room temperature;Journal of Crystal Growth;2002-12
4. Transition from Overlayer Growth to Alloying Growth of Ga onSi(111)−α–(3×3)−Au;Physical Review Letters;2002-10-16
5. Surfactant-mediated growth of an ordered flat film of an intrinsic liquid metal on a semiconductor surface: Ga onSi(111)−4×1−In;Physical Review B;2002-10-07
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