Dramatic enhancement of 1.54 μm emission in Er doped GaN quantum well structures
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.4916393
Reference25 articles.
1. Crystal field analysis of rare-earth ions energy levels in GaN
2. Electroluminescent properties of erbium-doped III–N light-emitting diodes
3. Photoluminescence spectroscopy of erbium implanted gallium nitride
4. 1.54‐μm photoluminescence from Er‐implanted GaN and AlN
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