Electrical and optical properties of neutron‐irradiated GaP crystals
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.345387
Reference18 articles.
1. The optical and electrical effects of high concentrations of defects in irradiated crystalline gallium arsenide
2. The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPR
3. Selective saturation of paramagnetic defects in electron‐ and neutron‐irradiated GaAs
4. Site switching of silicon in neutron-irradiated and annealed gallium arsenide by vacancy migration
5. Kinetics of formation of the midgap donor EL2 in neutron irradiated GaAs materials
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1. Traditional Application of Stable and Radioactive Isotopes;Isotopes in Condensed Matter;2012-08-11
2. Peculiarities of neutron irradiation influence on GaP light-emitting structures;Semiconductor physics, quantum electronics and optoelectronics;2009-05-15
3. Fundamentals and applications of isotope effect in solids;Progress in Materials Science;2006-03
4. Ion channeling and Raman scattering studies of the lattice disorder and residual strain in neutron irradiated GaN;Solid State Communications;2004-07
5. Applications of isotope effects in solids;Journal of Materials Science;2003
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