Ion channeling and Raman scattering studies of the lattice disorder and residual strain in neutron irradiated GaN
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Condensed Matter Physics,General Chemistry
Reference23 articles.
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1. Research on the Synergistic Effect of Total Ionization and Displacement Dose in GaN HEMT Using Neutron and Gamma-Ray Irradiation;Nanomaterials;2022-06-21
2. Potential for neutron and proton transmutation doping of GaN and Ga2O3;Materials Advances;2020
3. Compensation mechanism of DX-like center in neutron transmutation doped GaN;Solid State Communications;2015-03
4. Influence of neutron irradiation and annealing on the optical properties of GaN;physica status solidi (c);2012-02-14
5. Optical and electrical characterization of AlGaN/GaN high electron mobility transistors irradiated with 5MeV protons;Journal of Crystal Growth;2011-07
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