Identification and activation energies of shallow donors in cubic SiC
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354785
Reference18 articles.
1. Temperature dependence of electrical properties of non‐doped and nitrogen‐doped beta‐SiC single crystals grown by chemical vapor deposition
2. Compensation in epitaxial cubic SiC films
3. Temperature dependence of electrical properties ofn‐ andp‐type 3C‐SiC
4. Residual Donors in P-SiC Films
5. Variation of impurity−to−band activation energies with impurity density
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