Residual Donors in P-SiC Films

Author:

Carlos W. E.,Moorea W. J.,Siebenmann P. G.,Freitas J. A.,Kaplan R.,Bishop S. G.,Nordquist P. E. R.,Kong M.,Davis R. F.

Abstract

ABSTRACTElectron Spin Resonance (ESR), temperature dependent Hall effect measurements and photoluminesence (PL) are used to examine the assumption that the residual donor in β-SiC films is nitrogen. At low temperatures the ESR has a three line isotropic spectrum which is characteristic of a central hyperfine interaction with nitrogen. The temperature dependence of the intensity of the nitrogen ESR signal correlates with the concentration of un-ionized donors measured by the Hall effect. Donor-Acceptor pair PL spectra are used to establish that the binding energy of the dominant donor in the films is the same as the nitrogen donor observed in Lely-grown samples. Neither PL nor ESR provide any evidence for the presence of a shallower donor.

Publisher

Springer Science and Business Media LLC

Subject

General Engineering

Cited by 13 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Epitaxial Growth, Characterization, and Properties of SiC;Electric Refractory Materials;2000-08-24

2. Identification and activation energies of shallow donors in cubic SiC;Journal of Applied Physics;1993-08

3. Electrical and optical characterization of SiC;Wide-Band-Gap Semiconductors;1993

4. Spectroscopic Studies of Donors in 3C-SiC Films;Springer Proceedings in Physics;1992

5. Transport Measurements and Shallow Donors in Cubic SiC;Springer Proceedings in Physics;1992

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