High quality ultraviolet AlGaN∕GaN multiple quantum wells with atomic layer deposition grown AlGaN barriers
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2996566
Reference15 articles.
1. Ultrafast intersubband relaxation (⩽150 fs) in AlGaN/GaN multiple quantum wells
2. Stimulated emission and ultrafast carrier relaxation in AlGaN/GaN multiple quantum wells
3. Room‐temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy
4. AlGaN/GaN quantum well ultraviolet light emitting diodes
5. An optically pumped GaN–AlGaN vertical cavity surface emitting laser
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1. Influence of growth interruption on the morphology and luminescence properties of AlGaN/GaN ultraviolet multi-quantum wells;Optics Express;2023-11-07
2. Diffusion in GaN/AlN superlattices: DFT and EXAFS study;Applied Surface Science;2020-06
3. Structure of interfaces in GaN/AlN and Ge/Si multilayered heterosystems by XAFS spectroscopy;Journal of Physics: Conference Series;2016-11
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