Strain in GaAs layers grown by liquid phase epitaxial lateral overgrowth
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.370994
Reference21 articles.
1. Issues and Problems Involved in Selective Epitaxial Growth of Silicon for SOI Fabrication
2. Low‐dislocation‐density GaAs epilayers grown on Ge‐coated Si substrates by means of lateral epitaxial overgrowth
3. High quality GexSi1-x by heteroepitaxial lateral overgrowth
4. Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
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