Effects of confinements on morphology of InxGa1−xAs thin film grown on sub-micron patterned GaAs substrate: Elastoplastic phase field model-Reference-Cited by-同舟云学术

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Effects of confinements on morphology of InxGa1−xAs thin film grown on sub-micron patterned GaAs substrate: Elastoplastic phase field model

Published:2014-09-21 Issue:11 Volume:116 Page:114313
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Arjmand M.¹,Deng J.²,Swaminathan N.³,Morgan D.¹²,Szlufarska I.¹²

Affiliation:

1. Department of Engineering Physics, University of Wisconsin—Madison, Madison 53706, USA

2. Department of Materials Science and Engineering, University of Wisconsin—Madison, Madison 53706, USA

3. Department of Mechanical Engineering, Indian Institute of Technology, Madras, India

Funder

University of Wisconsin Materials Research Science and Engineering Center

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4896074

Reference68 articles.

1. InAs-Dot/GaAs Structures Site-Controlled byin situElectron-Beam Lithography and Self-Organizing Molecular Beam Epitaxy Growth

2. Linearly Polarized Emission from Colloidal Semiconductor Quantum Rods

3. Spectroscopy of Nanoscopic Semiconductor Rings

4. Highly ordered nanostructures with tunable size, shape and properties: A new way to surface nano-patterning using ultra-thin alumina masks

5. Self-Assembly at All Scales

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Analytical elastoplastic analysis of heteroepitaxial core-shell nanowires;AIP Advances;2019-05

2. Control of surface induced phase separation in immiscible semiconductor alloy core-shell nanowires;Computational Materials Science;2017-04

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