Author:
Domagala J.Z.,Paszkowicz W.,Bak-Misiuk J.,Ermakova O.N.,Dabkowska H.
Reference60 articles.
1. Low threshold λ=1.3μm multi-quantum well laser diodes grown by metalorganic vapor phase epitaxy using tertiarybutylarsine and tertiarybutylphosphine precursors;Ae;J. Cryst. Growth,1994
2. The distribution of lattice strain and tilt in LEC semi-insulating GaAs measured by double crystal X-ray topography;Barnett,1987
3. Investigation of the Homogeneity and Defect Structure in Semi-Insulating Lec GaAs Single Crystals by Synchrotron Radiation Double Crystal X-Ray Topography.
4. Advances in synchrotron hard X-ray based imaging;Baruchel;C. R. Phys.,2008
5. Crystal structure refinements of zircon-type MVO4 (M=Sc, Y, Ce, Pr, Nd, Tb, Ho, Er, Tm, Yb, Lu);Chakoumakos;J. Solid State Chem.,1994
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献