Mobility enhancement in strained Si modulation-doped structures by chemical mechanical polishing
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1539557
Reference15 articles.
1. Comparative study of phonon‐limited mobility of two‐dimensional electrons in strained and unstrained Si metal–oxide–semiconductor field‐effect transistors
2. Subband structure and mobility of two-dimensional holes in strained Si/SiGe MOSFET’s
3. Very high mobility two‐dimensional hole gas in Si/GexSi1−x/Ge structures grown by molecular beam epitaxy
4. Ultrahigh room-temperature hole Hall and effective mobility in Si0.3Ge0.7/Ge/Si0.3Ge0.7 heterostructures
5. Role of Si1−xGex buffer layer on mobility enhancement in a strained-Si n-channel metal–oxide–semiconductor field-effect transistor
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3. Experimental and theoretical analysis of the temperature dependence of the two-dimensional electron mobility in a strained Si quantum well;Journal of Applied Physics;2012-04
4. Influences of lattice mismatches on equilibrium morphologies and strain distributions of quantum dots;The European Physical Journal B;2012-01
5. Strain engineering of silicon–germanium (SiGe) virtual substrates;Silicon–Germanium (SiGe) Nanostructures;2011
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