Investigation of optical transitions in InAs/GaAs(Sb)/AlAsSb quantum dots using modulation spectroscopy
Author:
Affiliation:
1. Nanopower Research Laboratories, Rochester Institute of Technology, Rochester, New York 14623, USA
2. University of California at Los Angeles, Los Angeles, California 90095, USA
Funder
U.S. Department of Energy (DOE)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4904076
Reference16 articles.
1. Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels
2. A. Martí , L. Cuadra , and A. Luque , in Conference Record of the Twenty-Eighth IEEE Photovoltaic Specialists Conference (2000), pp. 940–943.
3. Self‐organized growth of regular nanometer‐scale InAs dots on GaAs
4. Novel semiconductor solar cell structures: The quantum dot intermediate band solar cell
5. Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell
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1. Optical properties of bimodally distributed InAs quantum dots grown on digital AlAs0.56Sb0.44matrix for use in intermediate band solar cells;Journal of Applied Physics;2017-06-07
2. Calculation of strain compensation thickness for III–V semiconductor quantum dot superlattices;Journal of Crystal Growth;2016-11
3. High-density InAs/GaAs1−xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells;Journal of Applied Physics;2016-03-21
4. Intermediate band solar cells: Recent progress and future directions;Applied Physics Reviews;2015-06
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