High-density InAs/GaAs1−xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells-Reference-Cited by-同舟云学术

High-density InAs/GaAs1−xSbx quantum-dot structures grown by molecular beam epitaxy for use in intermediate band solar cells

Published:2016-03-21 Issue:11 Volume:119 Page:114301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Debnath M. C.¹²^ORCID,Mishima T. D.¹,Santos M. B.¹,Cheng Y.¹,Whiteside V. R.¹,Sellers I. R.¹,Hossain K.³,Laghumavarapu R. B.²,Liang B. L.²,Huffaker D. L.²

Affiliation:

1. Homer L. Dodge Department of Physics and Astronomy, University of Oklahoma, Norman, Oklahoma 73019, USA

2. California NanoSystems Institute and Electrical Engineering Department, University of California-Los Angeles (UCLA), Los Angeles, California 90095, USA

3. Amethyst Research, Inc., 123 Case Circle, Ardmore, Oklahoma 73401, USA

Funder

National Science Foundation (NSF)

Oklahoma Center for the Advancement of Science and Technology (OCAST)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/jap/119/11/1.4943631.pdf?itemId=/content/aip/journal/jap/119/11/10.1063/1.4943631&mimeType=pdf&containerItemId=content/aip/journal/jap

Reference41 articles.

1. Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells