Control of the residual doping of InAs/(GaIn)Sb infrared superlattices
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1310167
Reference12 articles.
1. Proposal for strained type II superlattice infrared detectors
2. Electrical and optical properties of infrared photodiodes using the InAs/Ga1−xInxSb superlattice in heterojunctions with GaSb
3. High performance InAs/Ga1-xInxSb superlattice infrared photodiodes
4. Type‐II quantum‐well lasers for the mid‐wavelength infrared
5. Continuous-wave operation of λ=3.25 μm broadened-waveguide W quantum-well diode lasers up to T=195 K
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1. Determination of background doping type in type-II superlattice using capacitance-voltage measurements with double mesa structure;Infrared Technology and Applications XLVI;2020-04-23
2. Determination of background doping polarity of unintentionally doped semiconductor layers;Applied Physics Letters;2020-02-18
3. Performance evaluation of InAs/GaSb superlattice photodetector grown on GaAs substrate using AlSb interfacial misfit array;Semiconductor Science and Technology;2018-01-31
4. Design of InAs/GaSb superlattice infrared barrier detectors;Superlattices and Microstructures;2017-04
5. Capacitance voltage profiling to determine doping in InAs/GaSb LWIR SL photodetector structures;SPIE Proceedings;2017-01-27
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