Design of InAs/GaSb superlattice infrared barrier detectors
Author:
Publisher
Elsevier BV
Subject
Electrical and Electronic Engineering,Condensed Matter Physics,General Materials Science
Reference36 articles.
1. Proposal for strained type II superlattice infrared detectors
2. A recent review of mid-wavelength infrared type-II superlattices: carrier localization, device performance, and radiation tolerance
3. Time-resolved optical measurements of minority carrier recombination in a mid-wave infrared InAsSb alloy and InAs/InAsSb superlattice
4. Significantly improved minority carrier lifetime observed in a long-wavelength infrared III-V type-II superlattice comprised of InAs/InAsSb
5. Gallium free type II InAs/InAsxSb1-x superlattice photodetectors
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1. Insights into optical absorption and dark currents of the 6.1 Å type-II superlattice absorbers for MWIR and SWIR applications;Journal of Applied Physics;2024-08-01
2. Design and calculation of photoelectric properties of resonance enhanced InAs/GaSb type-II superlattices photodetectors with diffraction rings structure;Heliyon;2024-06
3. Interfaces-engineered M-structure for infrared detectors;Opto-Electronics Review;2024-04-11
4. Performance analysis of an InAs/GaSb superlattice barrier photodetector covering the full LWIR spectral domain;Opto-Electronics Review;2024-01-03
5. Dark current behaviour of type-II superlattice longwave infrared photodetectors under proton irradiation;Opto-Electronics Review;2024-01-03
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