Quantitative Kelvin probe force microscopy of current-carrying devices-Reference-Cited by-同舟云学术

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Quantitative Kelvin probe force microscopy of current-carrying devices

Published:2013-02-25 Issue:8 Volume:102 Page:083503
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fuller Elliot J.,Pan Deng,Corso Brad L.,Tolga Gul O.,Gomez Jose R.,Collins Philip G.

Funder

National Science Foundation

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4793480

Reference34 articles.

1. Kelvin Probe Force Microscopy

2. High-resolution imaging of contact potential difference with ultrahigh vacuum noncontact atomic force microscope

3. Probe Microscope Observation of Platinum Atoms Deposited on the TiO2(110)-(1 × 1) Surface

4. Resolution and contrast in Kelvin probe force microscopy

5. Investigation of the cleaved surface of a p–i–n laser using Kelvin probe force microscopy and two-dimensional physical simulations

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1. Quantitative characterization of built-in potential profile across GaAs p–n junctions using Kelvin probe force microscopy with qPlus sensor AFM;Nanotechnology;2023-11-24

2. Utilizing the surface potential of a solid electrolyte region as the potential reference in Kelvin probe force microscopy;Beilstein Journal of Nanotechnology;2022-12-19

3. Measurements of the work function of AgI intercalated carbon nanotubes using different scanning techniques;Physica E: Low-dimensional Systems and Nanostructures;2022-01

4. Charge transport in semiconducting carbon nanotube networks;Applied Physics Reviews;2021-12

5. The Exterior of Single-Walled Carbon Nanotubes as a Millimeter-Long Cation-Preferring Nanochannel;Chemistry of Materials;2018-07-16

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