Simulation of hot-electron oxide tunneling current based on a non-Maxwellian electron energy distribution function
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1516617
Reference14 articles.
1. Complete transient simulation of flash EEPROM devices
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4. Gate tunneling currents in ultrathin oxide metal–oxide–silicon transistors
5. Tunneling in a finite superlattice
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