TCAD simulation of tunneling leakage current in CaF2/Si(111) MIS structures
Author:
Funder
Austrian Science Fund
Publisher
Elsevier BV
Subject
General Physics and Astronomy,General Materials Science
Reference19 articles.
1. Electrical characterization and modeling of the Au/CaF2/nSi(111) structures with high-quality tunnel-thin fluoride layer
2. Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)
3. Epitaxial Growth and Electrical Characteristics of CaF2/Si/CaF2 Resonant Tunneling Diode Structures Grown on Si(111) 1°-off Substrate
4. CaF2/CdF2 Double-Barrier Resonant Tunneling Diode with High Room-Temperature Peak-to-Valley Ratio
5. Improved Reproducibility in CaF2/Fe3Si/CaF2Ferromagnetic Resonant Tunneling Diodes on Si(111) Substrates by Selected-Area Molecular Beam Epitaxy
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Diamond-like carbon as gate dielectric for metal–insulator–semiconductor applications;Modern Physics Letters B;2019-12-10
2. Simulating Tunneling Electron Transport in the Semiconductor–Crystalline Insulator–Si(111) System;Semiconductors;2018-07-06
3. Suppression in the electrical hysteresis by using CaF2 dielectric layer for p-GaN MIS capacitors;Journal of Applied Physics;2018-03-29
4. Investigation on the interfacial chemical state and band alignment for the sputtering-deposited CaF2/p-GaN heterojunction by angle-resolved X-ray photoelectron spectroscopy;Journal of Applied Physics;2016-11-14
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