Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)-Reference-Cited by-同舟云学术

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Structural transitions and relaxation processes during the epitaxial growth of ultrathinCaF2films on Si(111)

Published:2010-08-31 Issue:8 Volume:82 Page:
ISSN:1098-0121
Container-title:Physical Review B
language:en
Short-container-title:Phys. Rev. B

Author:

Deiter Carsten,Bierkandt Markus,Klust Andreas,Kumpf Christian,Su Yixi,Bunk Oliver,Feidenhans’l Robert,Wollschläger Joachim

Publisher

American Physical Society (APS)

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevB.82.085449/fulltext

Reference62 articles.

1. Growth and characterization of single crystal insulators on silicon

2. Room temperature negative differential resistance of metal (CoSi2)/insulator (CaF2) resonant tunnelling diode

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1. Electronic properties of CaF₂ bulk and interfaces;Journal of Applied Physics;2022-06-07

2. Structural, surface and luminescent properties of SrF2:Eu annealed thin films;Vacuum;2021-09

3. Band alignment at the CaF2/Si(111) interface through advanced electronic structure calculations;Physical Review B;2020-06-01

4. Upconverting tri-doped calcium fluoride-based thin films: a comparison of the MOCVD and sol–gel preparation methods;Journal of Materials Chemistry C;2020

5. Nanostructured CaF2 :Ln3+ (Ln3+ = Yb3+ /Er3+ , Yb3+ /Tm3+ ) Thin Films: MOCVD Fabrication and Their Upconversion Properties;Advanced Materials Interfaces;2017-05-15

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