On the relative importance of physical and chemical sputtering during ion‐enhanced etching of silicon by XeF2

Author:

Houle F. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Cited by 17 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Comparison of the Interactions of XeF2 and F2 with Si(100)(2 × 1);The Journal of Physical Chemistry B;2002-07-10

2. Hyperthermal neutral beam etching;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-05

3. Chemical structure and reactivity of a silicon single crystal surface fluorinated by xenon fluoride;Journal of Applied Physics;1994-09

4. Phenomenological modeling of ion-enhanced surface kinetics in fluorine-based plasma etching;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-07

5. Ion–surface interactions: from sputtering to reactive ion etching;Materials Science and Technology;1992-07

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