On the relative importance of physical and chemical sputtering during ion‐enhanced etching of silicon by XeF2-Reference-Cited by-同舟云学术

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On the relative importance of physical and chemical sputtering during ion‐enhanced etching of silicon by XeF2

Published:1987-06-22 Issue:25 Volume:50 Page:1838-1840
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Houle F. A.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.97713

Reference19 articles.

1. Ion‐surface interactions in plasma etching

2. The design of plasma etchants

3. Plasma-assisted etching mechanisms: The implications of reaction probability and halogen coverage

4. The etching of W(111) with XeF2

5. Mechanism of silicon etching by a CF4 plasma

Cited by 17 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Comparison of the Interactions of XeF2 and F2 with Si(100)(2 × 1);The Journal of Physical Chemistry B;2002-07-10

2. Hyperthermal neutral beam etching;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;1995-05

3. Chemical structure and reactivity of a silicon single crystal surface fluorinated by xenon fluoride;Journal of Applied Physics;1994-09

4. Phenomenological modeling of ion-enhanced surface kinetics in fluorine-based plasma etching;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-07

5. Ion–surface interactions: from sputtering to reactive ion etching;Materials Science and Technology;1992-07

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