Observation of the quantum-confinement effect in individual β-FeSi2 nanoislands epitaxially grown on Si (111) surfaces using scanning tunneling spectroscopy-Reference-Cited by-同舟云学术

Observation of the quantum-confinement effect in individual β-FeSi2 nanoislands epitaxially grown on Si (111) surfaces using scanning tunneling spectroscopy

Published:2006-09-18 Issue:12 Volume:89 Page:123104
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Nakamura Yoshiaki,Suzuki Ryota,Umeno Masafumi,Cho Sung-Pyo,Tanaka Nobuo,Ichikawa Masakazu

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.2349842

Reference16 articles.

1. Optical properties of semiconducting iron disilicide thin films

2. A silicon/iron-disilicide light-emitting diode operating at a wavelength of 1.5 μm

3. Room Temperature 1.6 µm Electroluminescence from a Si-Based Light Emitting Diode with β-FeSi2 Active Region

4. Photoluminescence properties of ion beam synthesized β-FeSi2

5. Strain dependent gap nature of epitaxial β-FeSi2 in silicon by first principles calculations

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