(Invited) Epitaxial Growth of Nanodots on Si Substrates with Controlled Interfaces and Their Application to Electronics and Thermoelectronics

Abstract

Epitaxial growth technique of Fe-based nanodots (NDs) on Si substrates was developed using the ultrathin SiO2 films. Fe, Fe germanide, and Fe oxide NDs were epitaxailly grown with ultrahigh density on Si substrates, where the interfaces between NDs and substrates were atomically sharp. To control the crystal structure of NDs, the control of the nuclei for ND growth substrates was important at the nucleation stage. The well-controlled nuclei also suppressed the undesirable reactions such as intermixing of Fe and Si or of Fe and Ge resulting in the atomically sharp interfaces between NDs and substrates. These NDs with well-controlled interfaces epitaxially grown on Si substrates exhibited the prospects for application to some devices