Strain dependent gap nature of epitaxial β-FeSi2 in silicon by first principles calculations
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124383
Reference19 articles.
1. On the origin of the 1.5 μm luminescence in ion beam synthesized β‐FeSi2
2. On the origin of the 1.5 μm luminescence in ion beam synthesized β‐FeSi2
3. Electronic Properties of Semiconducting Silicides
4. Electronic structure of buried α-FeSi2and β-FeSi2layers: Soft-x-ray-emission and -absorption studies compared to band-structure calculations
5. Fe, Ru, and Os disilicides: Electronic structure of ordered compounds
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