Transport mechanisms in atomic-layer-deposited Al2O3 dielectrics
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1703840
Reference11 articles.
1. Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks
2. Polarity effect on the temperature dependence of leakage current through HfO2/SiO2 gate dielectric stacks
3. The role of native traps on the tunneling characteristics of ultra-thin (1.5–3 nm) oxides
4. Characteristics of n+ polycrystalline-Si/Al2O3/Si metal–oxide– semiconductor structures prepared by atomic layer chemical vapor deposition using Al(CH3)3 and H2O vapor
5. Modeling of tunneling currents through HfO2 and (HfO2)x(Al2O3)/sub 1-x/ gate stacks
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