AlGaN/GaN MISHEMTs with epitaxially grown GdScO3 as high-κ dielectric
Author:
Affiliation:
1. Institute of Applied Physics, Technical University Bergakademie Freiberg, D-09599 Freiberg, Germany
2. Peter Grünberg Institute (PGI-9) and JARA-Fundamentals of Future Information Technology, Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
Funder
Deutsche Forschungsgemeinschaft
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
https://aip.scitation.org/doi/pdf/10.1063/5.0037692
Reference22 articles.
1. Two dimensional electron gases induced by spontaneous and piezoelectric polarization in undoped and doped AlGaN/GaN heterostructures
2. Role of the dielectric for the charging dynamics of the dielectric/barrier interface in AlGaN/GaN based metal-insulator-semiconductor structures under forward gate bias stress
3. Analysis of threshold voltage instability in AlGaN/GaN MISHEMTs by forward gate voltage stress pulses
4. A GaN enhancement-mode reverse blocking MISHEMT with MIS field-effect drain for bidirectional switch
5. AlGaN/GaN MOS-HEMT With $\hbox{HfO}_{2}$ Dielectric and $\hbox{Al}_{2}\hbox{O}_{3}$ Interfacial Passivation Layer Grown by Atomic Layer Deposition
Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Challenges and Opportunities for High-Power and High-Frequency AlGaN/GaN High-Electron-Mobility Transistor (HEMT) Applications: A Review;Micromachines;2022-12-01
2. Effect of annealing atmosphere on the structure and spectral properties of GdScO<sub>3</sub> and Yb:GdScO<sub>3</sub> crystals;Acta Physica Sinica;2022
3. Local increase in compressive strain (GaN) in gate recessed AlGaN/GaN MISHFET structures induced by an amorphous AlN dielectric layer;Semiconductor Science and Technology;2021-08-23
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