Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10 nm-Reference-Cited by-同舟云学术

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Electrical characteristics of field-effect transistors based on indium arsenide nanowire thinner than 10 nm

Published:2014-10-06 Issue:14 Volume:105 Page:143101
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Fu Mengqi¹,Pan Dong²,Yang Yingjun¹,Shi Tuanwei¹,Zhang Zhiyong¹,Zhao Jianhua²,Xu H. Q.¹,Chen Qing¹

Affiliation:

1. Key Laboratory for the Physics and Chemistry of Nanodevices and Department of Electronics, Peking University, Beijing 100871, China

2. State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China

Funder

MOST of China

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4897496

Reference30 articles.

1. Fermi Level Position at Semiconductor Surfaces

2. High-Frequency Gate-All-Around Vertical InAs Nanowire MOSFETs on Si Substrates

3. Extrinsic and Intrinsic Performance of Vertical InAs Nanowire MOSFETs on Si Substrates

4. Vertically integrated, three-dimensional nanowire complementary metal-oxide-semiconductor circuits

5. Single InAs/GaSb Nanowire Low-Power CMOS Inverter

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