Monte Carlo simulation of pseudomorphic InGaAs/GaAs high electron mobility transistors: Physical limitations at ultrashort gate length
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.353341
Reference20 articles.
1. 0.1-µm Gate-length pseudomorphic HEMT's
2. Electron saturation velocity variation in InGaAs and GaAs channel MODFETs for gate length to 550 AA
3. A high-current pseudomorphic AlGaAs/InGaAs double quantum-well MODFET
4. Charge control, DC, and RF performance of a 0.35- mu m pseudomorphic AlGaAs/InGaAs modulation-doped field-effect transistor
5. Band‐edge discontinuities of strained‐layer InxGa1−xAs/GaAs heterojunctions and quantum wells
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