0.1-µm Gate-length pseudomorphic HEMT's-Reference-Cited by-同舟云学术

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0.1-µm Gate-length pseudomorphic HEMT's

Published:1987-10 Issue:10 Volume:8 Page:489-491
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Chao P.C.,Tiberio R.C.,Duh K.-H.G.,Smith P.M.,Ballingall J.M.,Lester L.F.,Lee B.R.,Jabra A.,Gifford G.G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/55/31994/01487254.pdf?arnumber=1487254

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