GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates-Reference-Cited by-同舟云学术

GaN drift-layer thickness effects in vertical Schottky barrier diodes on free-standing HVPE GaN substrates

Published:2019-04 Issue:4 Volume:9 Page:045007
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Sandupatla A.¹^ORCID,Arulkumaran S.²³,Ng G. I.¹²,Ranjan K.¹²,Deki M.³,Nitta S.³^ORCID,Honda Y.³,Amano H.³

Affiliation:

1. School of Electrical and Electronic Engineering, Nanyang Technological University, 50 Nanyang Avenue, Singapore 639798

2. Temasek Laboratories@NTU, Nanyang Technological University, Research Techno Plaza, 50 Nanyang Drive, Singapore 637553

3. Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and Systems for Sustainability (IMaSS), Nagoya University, Nagoya 464-8603, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5087491

Reference26 articles.

1. Radiation hardness of gallium nitride

2. Editors' Choice—On the Radiation Tolerance of AlGaN/GaN HEMTs

3. Neutron irradiation effects on metal-gallium nitride contacts

4. Review of using gallium nitride for ionizing radiation detection

5. 50 A vertical GaN Schottky barrier diode on a free-standing GaN substrate with blocking voltage of 790 V

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