Effect of phosphorus doping on stress in silicon and polycrystalline silicon
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.332255
Reference18 articles.
1. The Oxidation of Shaped Silicon Surfaces
2. Influence of film stress and thermal oxidation on the generation of dislocations in silicon
3. Selective Oxidation of Silicon in High Pressure Steam
4. Stress-sensitive properties of silicon-gate MOS devices
5. Metal Precipitates in Silicon p‐n Junctions
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