Growth of quantum fortress structures in Si1−xGex/Si via combinatorial deposition-Reference-Cited by-同舟云学术

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Growth of quantum fortress structures in Si1−xGex/Si via combinatorial deposition

Published:2003-12-22 Issue:25 Volume:83 Page:5205-5207
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Vandervelde Thomas E.,Kumar Piyush,Kobayashi Takeshi,Gray Jennifer L.,Pernell Tim,Floro Jerrold A.,Hull Robert,Bean John C.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1636268

Reference12 articles.

1. Dislocation-free Stranski-Krastanow growth of Ge on Si(100)

2. Evolution of coherent islands inSi1−xGex/Si(001)

3. Transition States Between Pyramids and Domes During Ge/Si Island Growth

4. Self-organized nanoscale structures in films

5. Kinetic pathway in Stranski-Krastanov growth of Ge on Si(001)

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3. Quantum dot molecule formation in Si-Ge heteroepitaxy on pit–patterned Si(001) substrate: A theoretical study;Journal of Crystal Growth;2020-04

4. Controllable growth of GeSi nanostructures by molecular beam epitaxy;Journal of Semiconductors;2018-05-29

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