Implantation-induced amorphization of InP characterized with perturbed angular correlation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.124872
Reference14 articles.
1. Ion mass and temperature dependence of damage production in ion implanted InP
2. Ion implantation in semiconductors—Part II: Damage production and annealing
3. Disorder production and amorphisation in ion implanted silicon
4. Crystalline to amorphous transformation in ion‐implanted silicon: a composite model
5. The accumulation of amorphousness as a function of irradiation fluence in a composite model of disorder production
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1. Ion-implantation-induced amorphization of InxGa1−xP alloys as functions of stoichiometry and temperature;Journal of Applied Physics;2016-05-21
2. Polymer tribology by combining ion implantation and radionuclide tracing;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2010-06
3. RBS and TEM studies of indium phosphide irradiated with 100 keV Au ions;Physics of Particles and Nuclei Letters;2009-11
4. The Potential of the Perturbed Angular Correlation Technique in Characterizing Semiconductors;Journal of Electronic Materials;2009-01-24
5. Atomic scale characterization of ion-induced amorphization of GaAs and InAs using perturbed angular correlation spectroscopy;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2008-04
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