Extraction of oxide trap properties using temperature dependence of random telegraph signals in submicron metal–oxide–semiconductor field-effect transistors-Reference-Cited by-同舟云学术

Extraction of oxide trap properties using temperature dependence of random telegraph signals in submicron metal–oxide–semiconductor field-effect transistors

Published:2001-05-15 Issue:10 Volume:89 Page:5526-5532
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Amarasinghe Nuditha Vibhavie,Çelik-Butler Zeynep,Keshavarz Abdol

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.1367404

Reference22 articles.

1. Discrete Resistance Switching in Submicrometer Silicon Inversion Layers: Individual Interface Traps and Low-Frequency (1f?) Noise

2. Single electron switching events in nanometer-scale Si MOSFET's

3. Noise in solid-state microstructures: A new perspective on individual defects, interface states and low-frequency (1/ƒ) noise

4. Hot-electron-induced traps studied through the random telegraph noise

5. Random telegraph signals in deep submicron n-MOSFET's

Cited by 39 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Voltage and temperature dependence of Random Telegraph Noise and their impacts on random number generator;Microelectronics Journal;2022-07

2. Noise spectroscopy of molecular electronic junctions;Applied Physics Reviews;2021-03

3. Oxide Trap-Induced RTS in MOSFETs;Noise in Nanoscale Semiconductor Devices;2020

4. Threshold Voltage Dependence of Random Telegraph Noise in 65 nm Floating Gate Multi-Level-Cell Memories;Nanoscience and Nanotechnology Letters;2019-01-01

5. Liquid-Gated Two-Layer Silicon Nanowire FETs: Evidence of Controlling Single-Trap Dynamic Processes;Nano Letters;2018-10-22