Threshold Voltage Dependence of Random Telegraph Noise in 65 nm Floating Gate Multi-Level-Cell Memories
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Published:2019-01-01
Issue:1
Volume:11
Page:87-91
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ISSN:1941-4900
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Container-title:Nanoscience and Nanotechnology Letters
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language:en
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Short-container-title:nanosci nanotechnol lett
Author:
Zhao Xiaojuan,Fan Wenbing,Wang Yaping,Li Haoliang,Yang Xiaonan
Publisher
American Scientific Publishers
Subject
General Materials Science