Voltage and temperature dependence of Random Telegraph Noise and their impacts on random number generator
Author:
Publisher
Elsevier BV
Subject
General Engineering
Reference26 articles.
1. RTN and PBTI-induced time-dependent variability of replacement metal-gate high-k InGaAs FinFETs;Franco,2014
2. A dual-point technique for the tntire I D–VG characterization into subthreshold region under random telegraph noise condition;Zhan;IEEE Electron. Device Lett.,2019
3. RTN assessment of traps in polysilicon cylindrical vertical FETs for NVM application;de Andrade;Microelectron. Eng.,2013
4. Single-trap-induced random telegraph noise for FinFET, Si/Ge Nanowire FET, Tunnel FET, SRAM and logic circuits;Fan;Microelectron. Reliab.,2014
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3. Random Telegraph Noise-Based True Random Number Generator for Fully Integrated Systems;Fluctuation and Noise Letters;2023-03-30
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