Influence of the doping profile and deep level trap characteristics on generation-recombination noise
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.365647
Reference16 articles.
1. Theory of low-frequency generation noise in junction-gate field-effect transistors
2. Evaluation of the trap concentration in highly doped semiconductors from low‐frequency noise spectra
3. Low frequency noise and DLTS as semiconductor device characterization tools
4. Temperature dependence of low-frequency excess noise in junction-gate FET's
5. Fluctuating deep‐level trap occupancy model for 1/f noise in semiconductor resistors
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1. Total dose effects on the g–r noise of JFET transistors;Journal of Semiconductors;2016-03
2. Localization and quantification of noise sources in four-gate field-effect-transistors;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2010-01-04
3. A Low-Frequency Noise Model for Four-Gate Field-Effect Transistors;IEEE Transactions on Electron Devices;2008-03
4. Generation-recombination noise in highly asymmetrical p–n junctions;Journal of Applied Physics;2002-07
5. Optimum design in a JFET for minimum generation–recombination noise;Microelectronics Reliability;2000-11
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