Localization and quantification of noise sources in four-gate field-effect-transistors

Author:

Luque Rodríguez A.,Jiménez Tejada J. A.,Godoy A.,López Villanueva J. A.,Gómez-Campos F. M.,Rodríguez-Bolivar S.

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Computer Science Applications,Modelling and Simulation

Reference18 articles.

1. Analytical modeling of the two-dimensional potential distribution and threshold voltage of the SOI four-gate transistor;Akarvardar;IEEE Transactions on Electron Devices,2006

2. Akarvardar K Chen S Blalock BJ Cristoloveanu S Gentil P Mojarradi MM A novel four-quadrant analog multiplier using SOI four-gate transistors (G4-FETs) 499 502

3. Akarvardar K Cristoloveanu S Gentil P Blalock BJ Dufrene B Mojarradi MM Depletion-all-around in SOI G4-FETs: a conduction mechanism with high performance 217 220

4. Low-frequency noise in SOI our-gate transistors;Akarvardar;IEEE Transactions on Electron Devices,2006

5. Total-dose radiation hardness of the SOI 4-gate transistor (G4-FET);Akarvardar;Proceedings of the ECS SOI Conference,2005

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effects of Gate Oxide and Junction Nonuniformity on the DC and Low-Frequency Noise Performance of Four-Gate Transistors;IEEE Transactions on Electron Devices;2012-02

2. Special Issue: 7th Spanish Conference on Electron Devices (CDE2009);International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2010-06-09

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3