Field-enhanced emission rate and electronic properties of a defect introduced in n-GaN by 5.4 MeV He-ion irradiation
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.123375
Reference17 articles.
1. Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies
2. H, He, and N implant isolation of n‐type GaN
3. Ion implantation doping and isolation of GaN
4. Production of Fast Switching Power Thyristors by Proton Irradiation
5. Deep‐level transient spectroscopy: A new method to characterize traps in semiconductors
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