Local structure and bonding of Er in GaN: A contrast with Er in Si
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.126499
Reference15 articles.
1. Chapter 4 Erbium in Silicon
2. Optoelectronic Properties and Applications of Rare-Earth-Doped GaN
3. Local structure of 1.54‐μm‐luminescence Er3+implanted in Si
4. Segregation and trapping of erbium during silicon molecular beam epitaxy
5. Visible emission from Er-doped GaN grown by solid source molecular beam epitaxy
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