Extended X-ray absorption fine structure study of the Er bonding in AlNO:Erx films with x ≤ 3.6%-Reference-Cited by-同舟云学术

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Extended X-ray absorption fine structure study of the Er bonding in AlNO:Erx films with x ≤ 3.6%

Published:2018-08-28 Issue:8 Volume:124 Page:085705
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Katsikini M.¹^ORCID,Kachkanov V.²^ORCID,Boulet P.³^ORCID,Edwards P. R.⁴^ORCID,O'Donnell K. P.⁴^ORCID,Brien V.³

Affiliation:

1. School of Physics, Aristotle University of Thessaloniki, GR-54124 Thessaloniki, Greece

2. Diamond Light Source Ltd, Diamond House, Chilton, Didcot, Oxfordshire OX11 0DE, United Kingdom

3. Institut Jean Lamour, UMR 7198, CNRS, Université de Lorraine, Campus Artem, 2 allée André Guinier, BP 50840, 54011 Nancy, France

4. SUPA Department of Physics, University of Strathclyde, 107 Rottenrow, Glasgow, G4 0NG Scotland, United Kingdom

Funder

ERASMUS Plus

Diamond Light Source

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5036614

Reference32 articles.

1. Photoluminescence properties of Er-doped AlN films prepared by magnetron sputtering

2. Concentration quenching of the luminescence from trivalent thulium, terbium, and erbium ions embedded in an AlN matrix

3. Extended X-ray absorption fine structure studies of GaN epilayers doped with Er

4. Erbium location into AlN films as probed by spatial resolution experimental techniques

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Incorporation of Europium into GaN Nanowires by Ion Implantation;The Journal of Physical Chemistry C;2019-04-02

2. Room temperature cathodoluminescence quenching of Er3+ in AlNOEr;Journal of Luminescence;2019-01

3. Substrate Temperature Dependent Properties of Sputtered AlN:Er Thin Film for In-Situ Luminescence Sensing of Al/AlN Multilayer Coating Health;Materials;2018-11-06

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