Band anticrossing in InGaPN alloys induced by N-related localized states
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2387972
Reference15 articles.
1. Nitrogen-Activated Transitions, Level Repulsion, and Band Gap Reduction inGaAs1−xNxwithx<0.03
2. Effect of nitrogen on the electronic band structure of group III-N-V alloys
3. Analysis of band anticrossing inGaNxP1−xalloys
4. Band Anticrossing in GaInNAs Alloys
5. Modeling of band gap properties of GaInNP alloys lattice matched to GaAs
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