Semiconducting ZnSnxGe1−xN2 alloys prepared by reactive radio-frequency sputtering-Reference-Cited by-同舟云学术

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Semiconducting ZnSnxGe1−xN2 alloys prepared by reactive radio-frequency sputtering

Published:2015-07 Issue:7 Volume:3 Page:076104
ISSN:2166-532X
Container-title:APL Materials
language:en
Short-container-title:APL Materials

Author:

Shing Amanda M.¹,Coronel Naomi C.¹,Lewis Nathan S.²,Atwater Harry A.³

Affiliation:

1. Department of Materials Science, California Institute of Technology, Pasadena, California 91125, USA

2. Division of Chemistry and Chemical Engineering, California Institute of Technology, Pasadena, California 91125, USA

3. Department of Applied Physics, California Institute of Technology, Pasadena, California 91125, USA

Funder

Dow Chemical Company (Dow)

Publisher

AIP Publishing

Subject

General Engineering,General Materials Science

Link

http://scitation.aip.org/deliver/fulltext/aip/journal/aplmater/3/7/1.4927009.pdf?itemId=/content/aip/journal/aplmater/3/7/10.1063/1.4927009&mimeType=pdf&containerItemId=content/aip/journal/aplmater

Reference23 articles.

1. Fabrication of full-color InGaN-based light-emitting diodes on amorphous substrates by pulsed sputtering

2. Phase separation in InGaN grown by metalorganic chemical vapor deposition

3. Quasiparticle band structure of Zn-IV-N2compounds

4. Electronic and lattice dynamical properties of II-IV-N2 semiconductors

5. GaN, AlN, and InN: A review

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1. Investigating the potential of earth-abundant ZnSnxGe1-xN2 alloys for quantum well solar cells;Micro and Nanostructures;2023-12

2. Theoretical and experimental approaches for the determination of functional properties of MgSnN2 thin films;Solar Energy Materials and Solar Cells;2022-08

3. Electron transport properties in degenerate magnesium tin oxynitride (Mg_1−xSn_1+xN_2−2yO_2y) with average wurtzite structure;Journal of Applied Physics;2022-02-21

4. Effects of Work Function and Electron Affinity on the Performance of Carrier-Selective Contacts in Silicon Solar Cells Using ZnSn$_\text{} x $ Ge$_\text{} 1-x $N$_\text{2}$ as a Case Study;IEEE Journal of Photovoltaics;2021-11

5. Band Gap-Tunable (Mg, Zn)SnN2 Earth-Abundant Alloys with a Wurtzite Structure;ACS Applied Electronic Materials;2021-10-21

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